Eris

Professional Discrete Semiconductor Manufacturer

Eris Technology Corporation was established 1995 in Taiwan. The company is an ODM (original design manufacturer) providing a variety of support services to design, manufacturing, and after-marketing services for diode products. Eris constantly focuses on the innovation of R&D based on their practical attitude and efficient management, providing high quality and good value products with competitive prices and excellent services to all clients. 

Product Portfolio

Their busniess scope comprises Schottky-, Zener- & TVS-Diodes, Bridge Rectifiers, inked Wafers, etc.

Suitable Applications

  • Electronics in general
  • Industrial electronics
  • Consumer electronics
  • Automotive electronics
  • Power supplies

Certifications and quality management

  • ISO 9001:2015
  • ISO 14001:2015
  • ISO 45001:2018
  • IATF 16949:2016
  • VDA 6.3

There are 10 of 1452 products shown.

ESIC06065SF

  • Package: ITO-220AC
  • VRRM [V]: 650 V
  • IF [A]: 6 A
  • IFSM max. [A]: 40 A
  • IR @ VRRM max. [μA]: 50 μA
  • QC typ. [nC]: 23 nC
  • VF @ IF max. [V]: 1.7 V
  • Manufacturer: Eris
ESIC06065SF

ECRD060A

  • Package: SMA (DO-214AC)
  • IP typ.[mA]: 60 mA
  • Ip [mA]: 54 mA ... 66 mA
  • V [V]: 190 V
  • T [°C]: -55 °C ... 150 °C
  • Manufacturer: Eris
ECRD060A

ECRD040B

  • Package: SMB (DO-214AA)
  • IP typ.[mA]: 40 mA
  • Ip [mA]: 36 mA ... 44 mA
  • V [V]: 190 V
  • T [°C]: -55 °C ... 150 °C
  • Manufacturer: Eris
ECRD040B

P5MBD012

  • Package: PPAK5X6
  • Configuration: Dual
  • MOSFET Type: N+P
  • VDS [V]: 40 / -40
  • RDS(ON) @10V [mΩ]: 11,5 / 30
  • RDS(ON) @4,5V [mΩ]: 16 / 45
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 42 / -27
  • Manufacturer: Eris
P5MBD012

S8MBD032

  • Package: SOP-8
  • Configuration: Dual
  • MOSFET Type: N+P
  • VDS [V]: 40 / -40
  • RDS(ON) @10V [mΩ]: 32 / 40
  • RDS(ON) @4,5V [mΩ]: 45 / 60
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 6,7 / -7,2
  • Manufacturer: Eris
S8MBD032

P6MNC6P0

  • Package: PPAK5X6
  • Configuration: Asym. Dual
  • MOSFET Type: N+N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 9 / 6
  • RDS(ON) @4,5V [mΩ]: 13 / 9
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 55 / 80
  • Manufacturer: Eris
P6MNC6P0

TNMNG30H

  • Package: SOT-23
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 3000
  • RDS(ON) @4,5V [mΩ]: 4000
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 0.3
  • Manufacturer: Eris
TNMNG30H

N8MPB028

  • Package: DFN2X2-6L
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -20
  • RDS(ON) @4,5V [mΩ]: 28
  • VGS max, [V]: ±10
  • ID @T=25°C [A]: -8.5
  • Manufacturer: Eris
N8MPB028

N9MNB040

  • Package: DFN2X2-6L
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 40
  • VGS max, [V]: ±10
  • ID @T=25°C [A]: 5.2
  • Manufacturer: Eris
N9MNB040

P3MNC012A

  • Package: PPAK3X3
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 12
  • RDS(ON) @4,5V [mΩ]: 16
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 42
  • Manufacturer: Eris
P3MNC012A