Nisshinbo Micro Devices provides RF switches that cover various communication applications such as 5G, Wi-Fi 6/6E and so on. The advantages of high performance switches are low insertion loss, high isolation and high linearity even if high frequency band by our unique GaAs process. Furthermore, integrated ESD protection elements achieve excellent ESD robustness.They also offer automotive grade products. In addition, Nisshinbo develop RF devices by SOI process.
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NJG1817ME4
Package (RF-Switch): QFN12
Features: SPDT Switch
P-1dB [dBm]: 40
Insertion Loss [dB]: 0,35@3,85GHz 0,4@4,7GHz 0,45@6,0GHz
Insertion Loss [dB]: 0,65@452 to 960MHz 0,30@452 to 960MHz 0,75@1710 to 2170MHz 0,45@1710 to 2170MHz 1,10@2300 to 2690MHz 0,45@2300 to 2690MHz 1,05@GSM850/900 1,20@GSM1800/1900
Isolation [dB]: 38@GSM850/900 34@GSM1800/1900 25@452 to 2690MHz 36@1805 to 1990MHz 33@452 to 2690MHz
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