Eris

Professional Discrete Semiconductor Manufacturer

Eris Technology Corporation was established 1995 in Taiwan. The company is an ODM (original design manufacturer) providing a variety of support services to design, manufacturing, and after-marketing services for diode products. Eris constantly focuses on the innovation of R&D based on their practical attitude and efficient management, providing high quality and good value products with competitive prices and excellent services to all clients. 

Product Portfolio

Their busniess scope comprises Schottky-, Zener- & TVS-Diodes, Bridge Rectifiers, inked Wafers, etc.

Suitable Applications

  • Electronics in general
  • Industrial electronics
  • Consumer electronics
  • Automotive electronics
  • Power supplies

Certifications and quality management

  • ISO 9001:2015
  • ISO 14001:2015
  • ISO 45001:2018
  • IATF 16949:2016
  • VDA 6.3

There are 10 of 1452 products shown.

D1MNAB25H

  • Package: TO-252 (D-PAK)
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 650
  • RDS(ON) @10V [mΩ]: 2500
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 4
  • Manufacturer: Eris
D1MNAB25H

I2MNAB13H

  • Package: TO-220F
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 650
  • RDS(ON) @10V [mΩ]: 1300
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 7
  • Manufacturer: Eris
I2MNAB13H

D1MNAB13H

  • Package: TO-252 (D-PAK)
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 650
  • RDS(ON) @10V [mΩ]: 1300
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 7
  • Manufacturer: Eris
D1MNAB13H

I2MNAB850

  • Package: TO-220F
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 650
  • RDS(ON) @10V [mΩ]: 850
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 12
  • Manufacturer: Eris
I2MNAB850

I2MNAB900

  • Package: TO-220F
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 650
  • RDS(ON) @10V [mΩ]: 900
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 10
  • Manufacturer: Eris
I2MNAB900

TUMNF16H

  • Package: SOT-363
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 55
  • RDS(ON) @10V [mΩ]: 1,6
  • RDS(ON) @4,5V [mΩ]: 2,5
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 0,36
  • Manufacturer: Eris
TUMNF16H

N9MBB040A

  • Package: DFN2X2-6L
  • Configuration: Dual
  • MOSFET Type: N+P
  • VDS [V]: 20 / -20
  • RDS(ON) @4,5V [mΩ]: 40 /100
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: 5 / -4,5
  • Manufacturer: Eris
N9MBB040A

P5MNC011

  • Package: PPAK5X6
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 11
  • RDS(ON) @4,5V [mΩ]: 13
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 30
  • Manufacturer: Eris
P5MNC011

D1MNM020

  • Package: TO-252 (D-PAK)
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 20
  • RDS(ON) @4,5V [mΩ]: 26
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 40
  • Manufacturer: Eris
D1MNM020

S8MNC8P5

  • Package: SOP-8
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 8.5
  • RDS(ON) @4,5V [mΩ]: 11
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 15
  • Manufacturer: Eris
S8MNC8P5