MOSFETs

A metal oxide semiconductor field effect transistor (short MOSFET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The manufacturer ERIS offers a wide range of low-voltage MOSFETs.

There are 10 of 395 products shown.

S8MBD032

  • Package: SOP-8
  • Configuration: Dual
  • MOSFET Type: N+P
  • VDS [V]: 40 / -40
  • RDS(ON) @10V [mΩ]: 32 / 40
  • RDS(ON) @4,5V [mΩ]: 45 / 60
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 6,7 / -7,2
  • Manufacturer: Eris
S8MBD032

P6MNC4P2

  • Package: PPAK5X6
  • Configuration: Asym. Dual
  • MOSFET Type: N+N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 9,5 / 4,2
  • RDS(ON) @4,5V [mΩ]: 14,5 / 6
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 43 / 85
  • Manufacturer: Eris
P6MNC4P2

P6MNC6P0

  • Package: PPAK5X6
  • Configuration: Asym. Dual
  • MOSFET Type: N+N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 9 / 6
  • RDS(ON) @4,5V [mΩ]: 13 / 9
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 55 / 80
  • Manufacturer: Eris
P6MNC6P0

N8MNB013

  • Package: DFN2X2-6L
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 13
  • VGS max, [V]: ±10
  • ID @T=25°C [A]: 9.9
  • Manufacturer: Eris
N8MNB013

NDMNC010

  • Package: DFN5X6
  • Configuration: 4 IN 1
  • MOSFET Type: N+N+N+N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 10,2
  • RDS(ON) @4,5V [mΩ]: 15
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 35
  • Manufacturer: Eris
NDMNC010

N9MNC030

  • Package: DFN2X2-6L
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 30
  • RDS(ON) @4,5V [mΩ]: 46
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 5
  • Manufacturer: Eris
N9MNC030

P3MNC012A

  • Package: PPAK3X3
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 12
  • RDS(ON) @4,5V [mΩ]: 16
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 42
  • Manufacturer: Eris
P3MNC012A

P3MNC013

  • Package: PPAK3X3
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 13
  • RDS(ON) @4,5V [mΩ]: 18
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 35
  • Manufacturer: Eris
P3MNC013

P3MNC020

  • Package: PPAK3X3
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 20
  • RDS(ON) @4,5V [mΩ]: 30
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 20
  • Manufacturer: Eris
P3MNC020

P3MNC3P8

  • Package: PPAK3X3
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 3,8
  • RDS(ON) @4,5V [mΩ]: 6
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 80
  • Manufacturer: Eris
P3MNC3P8
Package

Configuration

MOSFET Type

VDS [V]

Rds (on) @10V [mΩ]

Rds (on) @4,5V [mΩ]

Vgs max. [V]

Vth max. [V]

Id @T=25°C [A]

Pd @T=25°C [W]

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