MOSFETs

A metal oxide semiconductor field effect transistor (short MOSFET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The manufacturer ERIS offers a wide range of low-voltage MOSFETs.

There are 10 of 395 products shown.

P3MPC8P5

  • Package: PPAK3X3
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -30
  • RDS(ON) @10V [mΩ]: 8,5
  • RDS(ON) @4,5V [mΩ]: 14
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -50
  • Manufacturer: Eris
P3MPC8P5

P3MPD014

  • Package: PPAK3X3
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -40
  • RDS(ON) @10V [mΩ]: 14
  • RDS(ON) @4,5V [mΩ]: 21
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -38
  • Manufacturer: Eris
P3MPD014

P5MNC012

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 12
  • RDS(ON) @4,5V [mΩ]: 16
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 48
  • Manufacturer: Eris
P5MNC012

P5MNC1P2

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 1,2
  • RDS(ON) @4,5V [mΩ]: 2,2
  • VGS max, [V]: +20 / -12
  • ID @T=25°C [A]: 240
  • Manufacturer: Eris
P5MNC1P2

P5MNC1P6

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 1,6
  • RDS(ON) @4,5V [mΩ]: 2.,4
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 130
  • Manufacturer: Eris
P5MNC1P6

P5MNC2P4

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 2,4
  • RDS(ON) @4,5V [mΩ]: 3,3
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 150
  • Manufacturer: Eris
P5MNC2P4

P5MNC5P5A

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 5,5
  • RDS(ON) @4,5V [mΩ]: 9
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 80
  • Manufacturer: Eris
P5MNC5P5A

P5MNC4P0

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 4
  • RDS(ON) @4,5V [mΩ]: 6
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 85
  • Manufacturer: Eris
P5MNC4P0

P5MNC5P5B

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 5,5
  • RDS(ON) @4,5V [mΩ]: 8,5
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 80
  • Manufacturer: Eris
P5MNC5P5B

P5MNC8P5

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 8,5
  • RDS(ON) @4,5V [mΩ]: 11
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 60
  • Manufacturer: Eris
P5MNC8P5
Package

Configuration

MOSFET Type

VDS [V]

Rds (on) @10V [mΩ]

Rds (on) @4,5V [mΩ]

Vgs max. [V]

Vth max. [V]

Id @T=25°C [A]

Pd @T=25°C [W]

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