MOSFETs

A metal oxide semiconductor field effect transistor (short MOSFET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The manufacturer ERIS offers a wide range of low-voltage MOSFETs.

There are 10 of 395 products shown.

P5MNG4P6

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 4,6
  • RDS(ON) @4,5V [mΩ]: 5,5
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 100
  • Manufacturer: Eris
P5MNG4P6

P5MNK7P2

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 80
  • RDS(ON) @10V [mΩ]: 7,2
  • VGS max, [V]: +20 / -12
  • ID @T=25°C [A]: 80
  • Manufacturer: Eris
P5MNK7P2

P5MNM7P2

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 7,2
  • RDS(ON) @4,5V [mΩ]: 11.2
  • VGS max, [V]: +20 / -12
  • ID @T=25°C [A]: 65
  • Manufacturer: Eris
P5MNM7P2

P5MNM9P2

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 9,2
  • RDS(ON) @4,5V [mΩ]: 14
  • VGS max, [V]: +20 / -12
  • ID @T=25°C [A]: 62
  • Manufacturer: Eris
P5MNM9P2

P5MPB2P3

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -20
  • RDS(ON) @10V [mΩ]: 2,3
  • RDS(ON) @4,5V [mΩ]: 2,6
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: -90
  • Manufacturer: Eris
P5MPB2P3

P5MPC8P5

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -30
  • RDS(ON) @10V [mΩ]: 8,5
  • RDS(ON) @4,5V [mΩ]: 14
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -60
  • Manufacturer: Eris
P5MPC8P5

P5MPG8P6

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -60
  • RDS(ON) @10V [mΩ]: 8,6
  • RDS(ON) @4,5V [mΩ]: 12
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -72
  • Manufacturer: Eris
P5MPG8P6

S8MNC011

  • Package: SOP-8
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 11
  • RDS(ON) @4,5V [mΩ]: 15
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 9
  • Manufacturer: Eris
S8MNC011

S8MNC018

  • Package: SOP-8
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 18
  • RDS(ON) @4,5V [mΩ]: 28
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 9
  • Manufacturer: Eris
S8MNC018

S8MNC013

  • Package: SOP-8
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 13
  • RDS(ON) @4,5V [mΩ]: 20
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 10
  • Manufacturer: Eris
S8MNC013
Package

Configuration

MOSFET Type

VDS [V]

Rds (on) @10V [mΩ]

Rds (on) @4,5V [mΩ]

Vgs max. [V]

Vth max. [V]

Id @T=25°C [A]

Pd @T=25°C [W]

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