MOSFETs

A metal oxide semiconductor field effect transistor (short MOSFET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The manufacturer ERIS offers a wide range of low-voltage MOSFETs.

There are 5 of 395 products shown.

T2MNN7P2

  • Package: TO-220
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 120
  • RDS(ON) @10V [mΩ]: 7.2
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 125
  • Manufacturer: Eris
T2MNN7P2

P5MND3P8

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 40
  • RDS(ON) @10V [mΩ]: 3,8
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 92
  • Manufacturer: Eris
P5MND3P8

N8MPB017

  • Package: DFN2X2-6L
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -20
  • RDS(ON) @4,5V [mΩ]: 17
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: -11,5
  • Manufacturer: Eris
N8MPB017

P5MNC0P7

  • Package: PPAK5x6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 0,7
  • RDS(ON) @4,5V [mΩ]: 1
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 250
  • Manufacturer: Eris
P5MNC0P7

T3SNAR070

  • Package: TO-247-3L
  • Configuration: Single
  • MOSFET Type: SiC N
  • VDS [V]: 1700
  • RDS(ON) @10V [mΩ]: 70
  • VGS max, [V]: 25
  • ID @T=25°C [A]: 70
  • Manufacturer: Eris
T3SNAR070
Package

Configuration

MOSFET Type

VDS [V]

Rds (on) @10V [mΩ]

Rds (on) @4,5V [mΩ]

Vgs max. [V]

Vth max. [V]

Id @T=25°C [A]

Pd @T=25°C [W]

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