MOSFETs

A metal oxide semiconductor field effect transistor (short MOSFET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The manufacturer ERIS offers a wide range of low-voltage MOSFETs.

There are 10 of 395 products shown.

P5MNG8P0

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 8
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 62
  • Manufacturer: Eris
P5MNG8P0

P5MNG010

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 10
  • RDS(ON) @4,5V [mΩ]: 13
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 65
  • Manufacturer: Eris
P5MNG010

P5MND4P0

  • Package: PPAK5X6
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 40
  • RDS(ON) @10V [mΩ]: 4
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 70
  • Manufacturer: Eris
P5MND4P0

T2MNP7P5

  • Package: TO-220
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 150
  • RDS(ON) @10V [mΩ]: 7,5
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 154
  • Manufacturer: Eris
T2MNP7P5

T2MNS020

  • Package: TO-220
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 200
  • RDS(ON) @10V [mΩ]: 20
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 75
  • Manufacturer: Eris
T2MNS020

P5MNG1P6

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 1,6
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 236
  • Manufacturer: Eris
P5MNG1P6

TNMPB055

  • Package: SOT-23
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -20
  • RDS(ON) @4,5V [mΩ]: 55
  • VGS max, [V]: ±8
  • ID @T=25°C [A]: -4
  • Manufacturer: Eris
TNMPB055

TQMNF16H

  • Package: SOT-523
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 55
  • RDS(ON) @10V [mΩ]: 1,6
  • RDS(ON) @4,5V [mΩ]: 2,5
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 0,3
  • Manufacturer: Eris
TQMNF16H

I2MNAB120

  • Package: TO-220F
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 650
  • RDS(ON) @10V [mΩ]: 120
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 19,3
  • Manufacturer: Eris
I2MNAB120

T2MNS085

  • Package: TO-220
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 200
  • RDS(ON) @10V [mΩ]: 85
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 28
  • Manufacturer: Eris
T2MNS085
Package

Configuration

MOSFET Type

VDS [V]

Rds (on) @10V [mΩ]

Rds (on) @4,5V [mΩ]

Vgs max. [V]

Vth max. [V]

Id @T=25°C [A]

Pd @T=25°C [W]

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