MOSFETs

A metal oxide semiconductor field effect transistor (short MOSFET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The manufacturer ERIS offers a wide range of low-voltage MOSFETs.

There are 10 of 395 products shown.

TNMNB065

  • Package: SOT-23
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 65
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: 2,3
  • Manufacturer: Eris
TNMNB065

P3MNG6P0

  • Package: PPAK3X3
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 6
  • RDS(ON) @4,5V [mΩ]: 10
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 66
  • Manufacturer: Eris
P3MNG6P0

TNMNB035

  • Package: SOT-23
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 35
  • VGS max, [V]: ±10
  • ID @T=25°C [A]: 5
  • Manufacturer: Eris
TNMNB035

TKMNM095

  • Package: SOT-223
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 95
  • RDS(ON) @4,5V [mΩ]: 110
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 6,5
  • Manufacturer: Eris
TKMNM095

TMMNC028

  • Package: SOT-23-6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 28
  • RDS(ON) @4,5V [mΩ]: 32
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: 6
  • Manufacturer: Eris
TMMNC028

S8MBM120

  • Package: SOP-8
  • Configuration: Dual
  • MOSFET Type: N+P
  • VDS [V]: 100 / -100
  • RDS(ON) @10V [mΩ]: 120 / 300
  • RDS(ON) @4,5V [mΩ]: 150 / 340
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 8,8 / -4,8
  • Manufacturer: Eris
S8MBM120

N8MNC013

  • Package: DFN2X2-6L
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 13
  • RDS(ON) @4,5V [mΩ]: 18
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 10
  • Manufacturer: Eris
N8MNC013

TKMPM300

  • Package: SOT-223
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -100
  • RDS(ON) @10V [mΩ]: 300
  • RDS(ON) @4,5V [mΩ]: 340
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -8,2
  • Manufacturer: Eris
TKMPM300

P5MNP012

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 150
  • RDS(ON) @10V [mΩ]: 12
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 120
  • Manufacturer: Eris
P5MNP012

P5MBG040

  • Package: PPAK5X6
  • Configuration: Dual
  • MOSFET Type: N+P
  • VDS [V]: 60 / -60
  • RDS(ON) @10V [mΩ]: 40 / 70
  • RDS(ON) @4,5V [mΩ]: 45 / 105
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 6,06 / -4,58
  • Manufacturer: Eris
P5MBG040
Package

Configuration

MOSFET Type

VDS [V]

Rds (on) @10V [mΩ]

Rds (on) @4,5V [mΩ]

Vgs max. [V]

Vth max. [V]

Id @T=25°C [A]

Pd @T=25°C [W]

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