MOSFETs

A metal oxide semiconductor field effect transistor (short MOSFET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The manufacturer ERIS offers a wide range of low-voltage MOSFETs.

There are 10 of 395 products shown.

T4SNAL052

  • Package: TO-247-4L
  • Configuration: Single
  • MOSFET Type: SiC N
  • VDS [V]: 1200
  • RDS(ON) @10V [mΩ]: 52
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: +25 / -10
  • ID @T=25°C [A]: 63
  • Manufacturer: Eris
T4SNAL052

T4SNAL100

  • Package: TO-247-4L
  • Configuration: Single
  • MOSFET Type: SiC N
  • VDS [V]: 1200
  • RDS(ON) @10V [mΩ]: 100
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: +25 / -10
  • ID @T=25°C [A]: 35
  • Manufacturer: Eris
T4SNAL100

T4SNAL028

  • Package: TO-247-4L
  • Configuration: Single
  • MOSFET Type: SiC N
  • VDS [V]: 1200
  • RDS(ON) @10V [mΩ]: 28
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: +25 / -10
  • ID @T=25°C [A]: 114
  • Manufacturer: Eris
T4SNAL028

LFSNAL052

  • Package: LFPAK8080
  • Configuration: Single
  • MOSFET Type: SiC N
  • VDS [V]: 1200
  • RDS(ON) @10V [mΩ]: 52
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: +25 / -10
  • ID @T=25°C [A]: 63
  • Manufacturer: Eris
LFSNAL052

TNMNM55H

  • Package: SOT-23
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 5500
  • RDS(ON) @4,5V [mΩ]: 6500
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 0,3
  • Manufacturer: Eris
TNMNM55H

NLSNAL052

  • Package: DFN8080
  • Configuration: Single
  • MOSFET Type: SiC N
  • VDS [V]: 1200
  • RDS(ON) @10V [mΩ]: 52
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: +25 / -10
  • ID @T=25°C [A]: 40
  • Manufacturer: Eris
NLSNAL052

TNMNM60H

  • Package: SOT-23
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 6000
  • RDS(ON) @4,5V [mΩ]: 9000
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 0,3
  • Manufacturer: Eris
TNMNM60H

I2MNAA190

  • Package: TO-220F
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 600
  • RDS(ON) @10V [mΩ]: 190
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 13
  • Manufacturer: Eris
I2MNAA190

I2MNAA380

  • Package: TO-220F
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 600
  • RDS(ON) @10V [mΩ]: 380
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 9,1
  • Manufacturer: Eris
I2MNAA380

TNMPB165

  • Package: SOT-23
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -20
  • RDS(ON) @4,5V [mΩ]: 165
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: -2,3
  • Manufacturer: Eris
TNMPB165
Package

Configuration

MOSFET Type

VDS [V]

Rds (on) @10V [mΩ]

Rds (on) @4,5V [mΩ]

Vgs max. [V]

Vth max. [V]

Id @T=25°C [A]

Pd @T=25°C [W]

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