MOSFETs

A metal oxide semiconductor field effect transistor (short MOSFET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The manufacturer ERIS offers a wide range of low-voltage MOSFETs.

There are 10 of 395 products shown.

D1MPM095

  • Package: TO-252 (D-PAK)
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -100
  • RDS(ON) @10V [mΩ]: 95
  • RDS(ON) @4,5V [mΩ]: 110
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -30
  • Manufacturer: Eris
D1MPM095

TNMNG100

  • Package: SOT-23
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 100
  • RDS(ON) @4,5V [mΩ]: 110
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 2,3
  • Manufacturer: Eris
TNMNG100

D1MPM400

  • Package: TO-252 (D-PAK)
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -100
  • RDS(ON) @10V [mΩ]: 400
  • RDS(ON) @4,5V [mΩ]: 420
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -10
  • Manufacturer: Eris
D1MPM400

D2MNP7P5

  • Package: TO-263 (D2-PAK)
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 150
  • RDS(ON) @10V [mΩ]: 7,5
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 154
  • Manufacturer: Eris
D2MNP7P5

D2MNS020

  • Package: TO-263 (D2-PAK)
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 200
  • RDS(ON) @10V [mΩ]: 20
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 75
  • Manufacturer: Eris
D2MNS020

D2MNT033

  • Package: TO-263 (D2-PAK)
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 250
  • RDS(ON) @10V [mΩ]: 33
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 60
  • Manufacturer: Eris
D2MNT033

LFMNK1P9

  • Package: LFPAK8080
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 85
  • RDS(ON) @10V [mΩ]: 1,9
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 313
  • Manufacturer: Eris
LFMNK1P9

T3SNAL052

  • Package: TO-247-3L
  • Configuration: Single
  • MOSFET Type: SiC N
  • VDS [V]: 1200
  • RDS(ON) @10V [mΩ]: 52
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: +25 / -10
  • ID @T=25°C [A]: 63
  • Manufacturer: Eris
T3SNAL052

LFMNM2P3

  • Package: LFPAK8080
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 2,3
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 282
  • Manufacturer: Eris
LFMNM2P3

T3SNAL100

  • Package: TO-247-3L
  • Configuration: Single
  • MOSFET Type: SiC N
  • VDS [V]: 1200
  • RDS(ON) @10V [mΩ]: 100
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: +25 / -10
  • ID @T=25°C [A]: 35
  • Manufacturer: Eris
T3SNAL100
Package

Configuration

MOSFET Type

VDS [V]

Rds (on) @10V [mΩ]

Rds (on) @4,5V [mΩ]

Vgs max. [V]

Vth max. [V]

Id @T=25°C [A]

Pd @T=25°C [W]

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