MOSFETs

A metal oxide semiconductor field effect transistor (short MOSFET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The manufacturer ERIS offers a wide range of low-voltage MOSFETs.

There are 10 of 395 products shown.

TQMNG30H

  • Package: SOT-523
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 3000
  • RDS(ON) @4,5V [mΩ]: 4000
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 0,3
  • Manufacturer: Eris
TQMNG30H

TQMNC500

  • Package: SOT-523
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @4,5V [mΩ]: 500
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: 0,6
  • Manufacturer: Eris
TQMNC500

TTMNB300

  • Package: SOT-563
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 300
  • VGS max, [V]: ±8
  • ID @T=25°C [A]: 0,8
  • Manufacturer: Eris
TTMNB300

TRMNB300

  • Package: SOT-723
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 300
  • VGS max, [V]: ±8
  • ID @T=25°C [A]: 0,8
  • Manufacturer: Eris
TRMNB300

TUMNB300

  • Package: SOT-363
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 300
  • VGS max, [V]: ±8
  • ID @T=25°C [A]: 0,8
  • Manufacturer: Eris
TUMNB300

TUMNG30H

  • Package: SOT-363
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 3000
  • RDS(ON) @4,5V [mΩ]: 4000
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 0,3
  • Manufacturer: Eris
TUMNG30H

TUMNC450

  • Package: SOT-363
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 30
  • RDS(ON) @4,5V [mΩ]: 450
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: 0,8
  • Manufacturer: Eris
TUMNC450

TVMPB650

  • Package: SOT-883
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -20
  • RDS(ON) @4,5V [mΩ]: 650
  • VGS max, [V]: ±8
  • ID @T=25°C [A]: -0,25
  • Manufacturer: Eris
TVMPB650

TVMNB350

  • Package: SOT-883
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 350
  • VGS max, [V]: ±8
  • ID @T=25°C [A]: 0,5
  • Manufacturer: Eris
TVMNB350

S9MPB016

  • Package: TSSOP-8
  • Configuration: Dual
  • MOSFET Type: P+P
  • VDS [V]: -20
  • RDS(ON) @4,5V [mΩ]: 16
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: -11
  • Manufacturer: Eris
S9MPB016
Package

Configuration

MOSFET Type

VDS [V]

Rds (on) @10V [mΩ]

Rds (on) @4,5V [mΩ]

Vgs max. [V]

Vth max. [V]

Id @T=25°C [A]

Pd @T=25°C [W]

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