MOSFETs

A metal oxide semiconductor field effect transistor (short MOSFET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The manufacturer ERIS offers a wide range of low-voltage MOSFETs.

There are 10 of 395 products shown.

D1MNM100

  • Package: TO-252 (D-PAK)
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 100
  • RDS(ON) @4,5V [mΩ]: 113
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 12
  • Manufacturer: Eris
D1MNM100

ER3909

  • Package: SOP-8
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -30
  • RDS(ON) @10V [mΩ]: 30
  • RDS(ON) @4,5V [mΩ]: 55
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -7
  • Manufacturer: Eris
ER3909

P5MPM050

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -100
  • RDS(ON) @10V [mΩ]: 50
  • RDS(ON) @4,5V [mΩ]: 55
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -8
  • Manufacturer: Eris
P5MPM050

S9MPC016

  • Package: TSSOP-8
  • Configuration: Dual
  • MOSFET Type: P+P
  • VDS [V]: -30
  • RDS(ON) @10V [mΩ]: 16
  • RDS(ON) @4,5V [mΩ]: 26
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -10
  • Manufacturer: Eris
S9MPC016

S9MPA021

  • Package: TSSOP-8
  • Configuration: Dual
  • MOSFET Type: P+P
  • VDS [V]: -16
  • RDS(ON) @4,5V [mΩ]: 21.1
  • VGS max, [V]: ±16
  • ID @T=25°C [A]: -8
  • Manufacturer: Eris
S9MPA021

D1MNAB48H

  • Package: TO-252 (D-PAK)
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 650
  • RDS(ON) @10V [mΩ]: 4800
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 2
  • Manufacturer: Eris
D1MNAB48H

T2MNAB25H

  • Package: TO-220
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 650
  • RDS(ON) @10V [mΩ]: 2500
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 4
  • Manufacturer: Eris
T2MNAB25H

D1MNAB25H

  • Package: TO-252 (D-PAK)
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 650
  • RDS(ON) @10V [mΩ]: 2500
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 4
  • Manufacturer: Eris
D1MNAB25H

I2MNAB25H

  • Package: TO-220F
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 650
  • RDS(ON) @10V [mΩ]: 2500
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 4
  • Manufacturer: Eris
I2MNAB25H

D1MNAB13H

  • Package: TO-252 (D-PAK)
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 650
  • RDS(ON) @10V [mΩ]: 1300
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 7
  • Manufacturer: Eris
D1MNAB13H
Package

Configuration

MOSFET Type

VDS [V]

Rds (on) @10V [mΩ]

Rds (on) @4,5V [mΩ]

Vgs max. [V]

Vth max. [V]

Id @T=25°C [A]

Pd @T=25°C [W]

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