MOSFETs

A metal oxide semiconductor field effect transistor (short MOSFET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The manufacturer ERIS offers a wide range of low-voltage MOSFETs.

There are 10 of 395 products shown.

P3MNC6P3

  • Package: PPAK3X3
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 6,3
  • RDS(ON) @4,5V [mΩ]: 9
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 30
  • Manufacturer: Eris
P3MNC6P3

P5MNC3P9

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 3,9
  • RDS(ON) @4,5V [mΩ]: 6,1
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 73
  • Manufacturer: Eris
P5MNC3P9

P5MNC6P3

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 6,3
  • RDS(ON) @4,5V [mΩ]: 9
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 52
  • Manufacturer: Eris
P5MNC6P3

P5MNM5P5

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 5,5
  • RDS(ON) @4,5V [mΩ]: 7,8
  • VGS max, [V]: +20 / -12
  • ID @T=25°C [A]: 70
  • Manufacturer: Eris
P5MNM5P5

P5MNG3P6

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 3,6
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 85
  • Manufacturer: Eris
P5MNG3P6

P5MNG8P5

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 8,5
  • RDS(ON) @4,5V [mΩ]: 12
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 75
  • Manufacturer: Eris
P5MNG8P5

P3MNG020

  • Package: PPAK3X3
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 20
  • RDS(ON) @4,5V [mΩ]: 24
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 33
  • Manufacturer: Eris
P3MNG020

I2MNAA380

  • Package: TO-220F
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 600
  • RDS(ON) @10V [mΩ]: 380
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 9,1
  • Manufacturer: Eris
I2MNAA380

I2MNAA190

  • Package: TO-220F
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 600
  • RDS(ON) @10V [mΩ]: 190
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 13
  • Manufacturer: Eris
I2MNAA190

P3MNG6P0

  • Package: PPAK3X3
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 6
  • RDS(ON) @4,5V [mΩ]: 10
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 66
  • Manufacturer: Eris
P3MNG6P0
Package

Configuration

MOSFET Type

VDS [V]

Rds (on) @10V [mΩ]

Rds (on) @4,5V [mΩ]

Vgs max. [V]

Vth max. [V]

Id @T=25°C [A]

Pd @T=25°C [W]

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