MOSFETs

A metal oxide semiconductor field effect transistor (short MOSFET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The manufacturer ERIS offers a wide range of low-voltage MOSFETs.

There are 10 of 395 products shown.

I2MNAB13H

  • Package: TO-220F
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 650
  • RDS(ON) @10V [mΩ]: 1300
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 7
  • Manufacturer: Eris
I2MNAB13H

I2MNAB850

  • Package: TO-220F
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 650
  • RDS(ON) @10V [mΩ]: 850
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 12
  • Manufacturer: Eris
I2MNAB850

TUMNF16H

  • Package: SOT-363
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 55
  • RDS(ON) @10V [mΩ]: 1,6
  • RDS(ON) @4,5V [mΩ]: 2,5
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 0,36
  • Manufacturer: Eris
TUMNF16H

I2MNAB900

  • Package: TO-220F
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 650
  • RDS(ON) @10V [mΩ]: 900
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 10
  • Manufacturer: Eris
I2MNAB900

P5MNC011

  • Package: PPAK5X6
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 11
  • RDS(ON) @4,5V [mΩ]: 13
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 30
  • Manufacturer: Eris
P5MNC011

N9MBB040A

  • Package: DFN2X2-6L
  • Configuration: Dual
  • MOSFET Type: N+P
  • VDS [V]: 20 / -20
  • RDS(ON) @4,5V [mΩ]: 40 /100
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: 5 / -4,5
  • Manufacturer: Eris
N9MBB040A

S8MNC8P5

  • Package: SOP-8
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 8.5
  • RDS(ON) @4,5V [mΩ]: 11
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 15
  • Manufacturer: Eris
S8MNC8P5

D1MNM020

  • Package: TO-252 (D-PAK)
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 20
  • RDS(ON) @4,5V [mΩ]: 26
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 40
  • Manufacturer: Eris
D1MNM020

P3MNC011A

  • Package: PPAK3X3
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 11
  • RDS(ON) @4,5V [mΩ]: 15
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 42
  • Manufacturer: Eris
P3MNC011A

TQMPB600

  • Package: SOT-523
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -20
  • RDS(ON) @4,5V [mΩ]: 600
  • VGS max, [V]: ±8
  • ID @T=25°C [A]: -0,4
  • Manufacturer: Eris
TQMPB600
Package

Configuration

MOSFET Type

VDS [V]

Rds (on) @10V [mΩ]

Rds (on) @4,5V [mΩ]

Vgs max. [V]

Vth max. [V]

Id @T=25°C [A]

Pd @T=25°C [W]

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