MOSFETs

A metal oxide semiconductor field effect transistor (short MOSFET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The manufacturer ERIS offers a wide range of low-voltage MOSFETs.

There are 10 of 395 products shown.

P3MPC018

  • Package: PPAK3X3
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -30
  • RDS(ON) @10V [mΩ]: 18
  • RDS(ON) @4,5V [mΩ]: 28
  • VGS max, [V]: ±25
  • ID @T=25°C [A]: -32
  • Manufacturer: Eris
P3MPC018

NJMNB9P0

  • Package: DFN2X3A-6L
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 9
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: 9,5
  • Manufacturer: Eris
NJMNB9P0

N3MNA4P3

  • Package: DFN3X3
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 12
  • RDS(ON) @4,5V [mΩ]: 4,3
  • VGS max, [V]: ±8
  • ID @T=25°C [A]: 56
  • Manufacturer: Eris
N3MNA4P3

N1MNB002

  • Package: DFN3.3X3.3
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 2
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: 50
  • Manufacturer: Eris
N1MNB002

TLMPC045

  • Package: SOT-23S
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -30
  • RDS(ON) @10V [mΩ]: 45
  • RDS(ON) @4,5V [mΩ]: 56
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: -4,6
  • Manufacturer: Eris
TLMPC045

N3MNB5P8

  • Package: DFN3X3
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 5,8
  • VGS max, [V]: ±8
  • ID @T=25°C [A]: 56
  • Manufacturer: Eris
N3MNB5P8

N8MNC019

  • Package: DFN2X2-6L
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 19
  • RDS(ON) @4,5V [mΩ]: 27
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 8
  • Manufacturer: Eris
N8MNC019

N5MNB6P7

  • Package: DFN2X3-6L
  • Configuration: Dual
  • MOSFET Type: N+N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 6,7
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: 32
  • Manufacturer: Eris
N5MNB6P7

TNMNC039

  • Package: SOT-23
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 39
  • RDS(ON) @4,5V [mΩ]: 43
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: 5,8
  • Manufacturer: Eris
TNMNC039

S8MPC030

  • Package: SOP-8
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -30
  • RDS(ON) @10V [mΩ]: 30
  • RDS(ON) @4,5V [mΩ]: 55
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -7
  • Manufacturer: Eris
S8MPC030
Package

Configuration

MOSFET Type

VDS [V]

Rds (on) @10V [mΩ]

Rds (on) @4,5V [mΩ]

Vgs max. [V]

Vth max. [V]

Id @T=25°C [A]

Pd @T=25°C [W]

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