MOSFETs

A metal oxide semiconductor field effect transistor (short MOSFET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The manufacturer ERIS offers a wide range of low-voltage MOSFETs.

There are 10 of 395 products shown.

P3MNC6P0

  • Package: PPAK3X3
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 6
  • RDS(ON) @4,5V [mΩ]: 9
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 60
  • Manufacturer: Eris
P3MNC6P0

P3MND013

  • Package: PPAK3X3
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 40
  • RDS(ON) @10V [mΩ]: 13
  • RDS(ON) @4,5V [mΩ]: 22
  • VGS max, [V]: +20 / -12
  • ID @T=25°C [A]: 30
  • Manufacturer: Eris
P3MND013

P3MND6P5

  • Package: PPAK3X3
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 40
  • RDS(ON) @10V [mΩ]: 6,5
  • RDS(ON) @4,5V [mΩ]: 9,7
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 43
  • Manufacturer: Eris
P3MND6P5

P3MNG012

  • Package: PPAK3X3
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 12
  • RDS(ON) @4,5V [mΩ]: 15
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 42
  • Manufacturer: Eris
P3MNG012

P3MNG015

  • Package: PPAK3X3
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 15
  • RDS(ON) @4,5V [mΩ]: 19
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 35
  • Manufacturer: Eris
P3MNG015

P3MPB015

  • Package: PPAK3X3
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -20
  • RDS(ON) @4,5V [mΩ]: 15
  • VGS max, [V]: ±10
  • ID @T=25°C [A]: -26
  • Manufacturer: Eris
P3MPB015

P3MPB8P0

  • Package: PPAK3X3
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -20
  • RDS(ON) @4,5V [mΩ]: 8
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: -60
  • Manufacturer: Eris
P3MPB8P0

P3MPC8P2

  • Package: PPAK3X3
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -30
  • RDS(ON) @10V [mΩ]: 8,2
  • RDS(ON) @4,5V [mΩ]: 12,5
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -55
  • Manufacturer: Eris
P3MPC8P2

P3MPC020A

  • Package: PPAK3X3
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -30
  • RDS(ON) @10V [mΩ]: 20
  • RDS(ON) @4,5V [mΩ]: 35
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -30
  • Manufacturer: Eris
P3MPC020A

P5MNC1P2

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 1,2
  • RDS(ON) @4,5V [mΩ]: 2,2
  • VGS max, [V]: +20 / -12
  • ID @T=25°C [A]: 240
  • Manufacturer: Eris
P5MNC1P2
Package

Configuration

MOSFET Type

VDS [V]

Rds (on) @10V [mΩ]

Rds (on) @4,5V [mΩ]

Vgs max. [V]

Vth max. [V]

Id @T=25°C [A]

Pd @T=25°C [W]

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