MOSFETs

A metal oxide semiconductor field effect transistor (short MOSFET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The manufacturer ERIS offers a wide range of low-voltage MOSFETs.

There are 10 of 395 products shown.

NKGNAB190

  • Package: DFN5X6A
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 650
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: +7 / -10
  • ID @T=25°C [A]: 11
  • Manufacturer: Eris
NKGNAB190

T2MNM7P6

  • Package: TO-220
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 7,6
  • RDS(ON) @4,5V [mΩ]: 11,4
  • VGS max, [V]: +20 / -12
  • ID @T=25°C [A]: 80
  • Manufacturer: Eris
T2MNM7P6

P5MNM9P5

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 9,5
  • RDS(ON) @4,5V [mΩ]: 14,5
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 58
  • Manufacturer: Eris
P5MNM9P5

P3MPC028

  • Package: PPAK3X3
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -30
  • RDS(ON) @10V [mΩ]: 28
  • RDS(ON) @4,5V [mΩ]: 50
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -25,7
  • Manufacturer: Eris
P3MPC028

T2MNM9P7

  • Package: TO-220
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 9,7
  • RDS(ON) @4,5V [mΩ]: 14,5
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 75
  • Manufacturer: Eris
T2MNM9P7

P3MBC011

  • Package: PPAK3X3
  • Configuration: Dual
  • MOSFET Type: N+P
  • VDS [V]: 30 / -30
  • RDS(ON) @10V [mΩ]: 11 / 22
  • RDS(ON) @4,5V [mΩ]: 17,6 / 32
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 30 / -20
  • Manufacturer: Eris
P3MBC011

P6MNC9P0

  • Package: PPAK5X6
  • Configuration: Asym. Dual
  • MOSFET Type: N+N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 9
  • RDS(ON) @4,5V [mΩ]: 12
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 30
  • Manufacturer: Eris
P6MNC9P0

TMMBC030

  • Package: SOT-23-6
  • Configuration: Dual
  • MOSFET Type: N+P
  • VDS [V]: 30 / -30
  • RDS(ON) @10V [mΩ]: 30 / 65
  • RDS(ON) @4,5V [mΩ]: 37 / 90
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 4 / -3
  • Manufacturer: Eris
TMMBC030

S8MPC032A

  • Package: SOP-8
  • Configuration: Dual
  • MOSFET Type: P
  • VDS [V]: -30
  • RDS(ON) @10V [mΩ]: 32
  • RDS(ON) @4,5V [mΩ]: 40
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -6
  • Manufacturer: Eris
S8MPC032A

TMMBB040

  • Package: SOT-23-6
  • Configuration: Dual
  • MOSFET Type: N+P
  • VDS [V]: 20 / -20
  • RDS(ON) @4,5V [mΩ]: 40 /100
  • VGS max, [V]: ±10
  • ID @T=25°C [A]: 3,8 / -2,5
  • Manufacturer: Eris
TMMBB040
Package

Configuration

MOSFET Type

VDS [V]

Rds (on) @10V [mΩ]

Rds (on) @4,5V [mΩ]

Vgs max. [V]

Vth max. [V]

Id @T=25°C [A]

Pd @T=25°C [W]

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