MOSFETs

A metal oxide semiconductor field effect transistor (short MOSFET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The manufacturer ERIS offers a wide range of low-voltage MOSFETs.

There are 10 of 395 products shown.

D1MNG6P0

  • Package: TO-252 (D-PAK)
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 6
  • RDS(ON) @4,5V [mΩ]: 7,5
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 75
  • Manufacturer: Eris
D1MNG6P0

TNMNB027

  • Package: SOT-23
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 27
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: 5
  • Manufacturer: Eris
TNMNB027

P5MNC5P1

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 5,1
  • RDS(ON) @4,5V [mΩ]: 11
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 60
  • Manufacturer: Eris
P5MNC5P1

S8MNM085

  • Package: SOP-8
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 85
  • RDS(ON) @4,5V [mΩ]: 110
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 4
  • Manufacturer: Eris
S8MNM085

P5MNM4P5

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 4,5
  • RDS(ON) @4,5V [mΩ]: 6,7
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 120
  • Manufacturer: Eris
P5MNM4P5

TUMBB350

  • Package: SOT-363
  • Configuration: Dual
  • MOSFET Type: N+P
  • VDS [V]: 20 / -20
  • RDS(ON) @10V [mΩ]: 350 / 600
  • RDS(ON) @4,5V [mΩ]: 350
  • VGS max, [V]: ±8
  • ID @T=25°C [A]: 0,72 / -0,53
  • Manufacturer: Eris
TUMBB350

P5MNM020

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 20
  • RDS(ON) @4,5V [mΩ]: 26
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 40
  • Manufacturer: Eris
P5MNM020

P5MNM8P0

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 8
  • RDS(ON) @4,5V [mΩ]: 12,5
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 91
  • Manufacturer: Eris
P5MNM8P0

TYMNB032

  • Package: TSOT-23
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 32
  • VGS max, [V]: ±8
  • ID @T=25°C [A]: 4,31
  • Manufacturer: Eris
TYMNB032

N4MNC011

  • Package: DFN3X3A
  • Configuration: Asym. Dual
  • MOSFET Type: N+N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 11
  • RDS(ON) @4,5V [mΩ]: 15
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 9
  • Manufacturer: Eris
N4MNC011
Part No.

Package

Configuration

MOSFET Type

VDS [V]

Rds (on) @10V [mΩ]

Rds (on) @4,5V [mΩ]

Vgs max. [V]

Vth max. [V]

Id @T=25°C [A]

Pd @T=25°C [W]

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