MOSFETs

A metal oxide semiconductor field effect transistor (short MOSFET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The manufacturer ERIS offers a wide range of low-voltage MOSFETs.

There are 10 of 395 products shown.

D2MNM3P5

  • Package: TO-263 (D2-PAK)
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 3,5
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 190
  • Manufacturer: Eris
D2MNM3P5

P5MPG085

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -60
  • RDS(ON) @10V [mΩ]: 85
  • RDS(ON) @4,5V [mΩ]: 101
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -14,4
  • Manufacturer: Eris
P5MPG085

P3MNM9P8

  • Package: PPAK3X3
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 9,8
  • RDS(ON) @4,5V [mΩ]: 14
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 48
  • Manufacturer: Eris
P3MNM9P8

D2MNG022

  • Package: TO-263 (D2-PAK)
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 22
  • RDS(ON) @4,5V [mΩ]: 27
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 42
  • Manufacturer: Eris
D2MNG022

D2MPD035

  • Package: TO-263 (D2-PAK)
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -40
  • RDS(ON) @10V [mΩ]: 35
  • RDS(ON) @4,5V [mΩ]: 60
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -25
  • Manufacturer: Eris
D2MPD035

S8MBC021

  • Package: SOP-8
  • Configuration: Dual
  • MOSFET Type: N+P
  • VDS [V]: 30 / -30
  • RDS(ON) @10V [mΩ]: 21 / 35
  • RDS(ON) @4,5V [mΩ]: 31 / 55
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 7 / -6
  • Manufacturer: Eris
S8MBC021

TNMNG100A

  • Package: SOT-23
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 100
  • RDS(ON) @4,5V [mΩ]: 110
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 3
  • Manufacturer: Eris
TNMNG100A

D2MND4P0

  • Package: TO-263 (D2-PAK)
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 40
  • RDS(ON) @10V [mΩ]: 4
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 85
  • Manufacturer: Eris
D2MND4P0

P5MNK5P6

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 85
  • RDS(ON) @10V [mΩ]: 5.6
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 100
  • Manufacturer: Eris
P5MNK5P6

P5MNM020A

  • Package: PPAK5X6
  • Configuration: Dual
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 20
  • RDS(ON) @4,5V [mΩ]: 25
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 40
  • Manufacturer: Eris
P5MNM020A
Package

Configuration

MOSFET Type

VDS [V]

Rds (on) @10V [mΩ]

Rds (on) @4,5V [mΩ]

Vgs max. [V]

Vth max. [V]

Id @T=25°C [A]

Pd @T=25°C [W]

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