MOSFETs

A metal oxide semiconductor field effect transistor (short MOSFET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The manufacturer ERIS offers a wide range of low-voltage MOSFETs.

There are 10 of 395 products shown.

P5MND1P0

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 40
  • RDS(ON) @10V [mΩ]: 1
  • RDS(ON) @4,5V [mΩ]: 1,5
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 200
  • Manufacturer: Eris
P5MND1P0

P5MNC2P5

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 2,5
  • RDS(ON) @4,5V [mΩ]: 3,8
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 45
  • Manufacturer: Eris
P5MNC2P5

S8MNM025

  • Package: SOP-8
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 25
  • RDS(ON) @4,5V [mΩ]: 30
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 30
  • Manufacturer: Eris
S8MNM025

P5MNC0P9

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 0,85
  • RDS(ON) @4,5V [mΩ]: 1,15
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 100
  • Manufacturer: Eris
P5MNC0P9

P3MNC2P6

  • Package: PPAK3X3
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 2,6
  • RDS(ON) @4,5V [mΩ]: 5
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 90
  • Manufacturer: Eris
P3MNC2P6

P3MPC032

  • Package: PPAK3X3
  • Configuration: Dual
  • MOSFET Type: P
  • VDS [V]: -30
  • RDS(ON) @10V [mΩ]: 32
  • RDS(ON) @4,5V [mΩ]: 50
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -14
  • Manufacturer: Eris
P3MPC032

P5MNG3P0

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 60
  • RDS(ON) @10V [mΩ]: 3
  • RDS(ON) @4,5V [mΩ]: 4,5
  • VGS max, [V]: ±20
  • Manufacturer: Eris
P5MNG3P0

P5MNK012

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 80
  • RDS(ON) @10V [mΩ]: 12
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 82
  • Manufacturer: Eris
P5MNK012

D1MNC5P1

  • Package: TO-252 (D-PAK)
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @10V [mΩ]: 5,1
  • RDS(ON) @4,5V [mΩ]: 11
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 54
  • Manufacturer: Eris
D1MNC5P1

LFMND0P7

  • Package: LFPAK8080
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 40
  • RDS(ON) @10V [mΩ]: 0,7
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 455
  • Manufacturer: Eris
LFMND0P7
Package

Configuration

MOSFET Type

VDS [V]

Rds (on) @10V [mΩ]

Rds (on) @4,5V [mΩ]

Vgs max. [V]

Vth max. [V]

Id @T=25°C [A]

Pd @T=25°C [W]

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