MOSFETs

A metal oxide semiconductor field effect transistor (short MOSFET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The manufacturer ERIS offers a wide range of low-voltage MOSFETs.

There are 10 of 395 products shown.

P3MBC020A

  • Package: PPAK3X3
  • Configuration: Dual
  • MOSFET Type: N+P
  • VDS [V]: 30 / -30
  • RDS(ON) @10V [mΩ]: 20 / 50
  • RDS(ON) @4,5V [mΩ]: 30 / 75
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 12 / -8
  • Manufacturer: Eris
P3MBC020A

P3MNB022

  • Package: PPAK3X3
  • Configuration: Com. Dual
  • MOSFET Type: N+N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 22
  • VGS max, [V]: ±8
  • ID @T=25°C [A]: 6
  • Manufacturer: Eris
P3MNB022

T3MNS010

  • Package: TO-247-3L
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 200
  • RDS(ON) @10V [mΩ]: 10
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 150
  • Manufacturer: Eris
T3MNS010

TVMNC560

  • Package: SOT-883
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 30
  • RDS(ON) @4,5V [mΩ]: 560
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: 0,4
  • Manufacturer: Eris
TVMNC560

P5MNM6P0

  • Package: PPAK5X6
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 100
  • RDS(ON) @10V [mΩ]: 6
  • RDS(ON) @4,5V [mΩ]: 9
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 110
  • Manufacturer: Eris
P5MNM6P0

I2MNAB340

  • Package: TO-220F
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 650
  • RDS(ON) @10V [mΩ]: 340
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 14
  • Manufacturer: Eris
I2MNAB340

T3MNT018

  • Package: TO-247-3L
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 250
  • RDS(ON) @10V [mΩ]: 18
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 120
  • Manufacturer: Eris
T3MNT018

S8MBG036

  • Package: SOP-8
  • Configuration: Dual
  • MOSFET Type: N+P
  • VDS [V]: 60 / -60
  • RDS(ON) @10V [mΩ]: 36 / 70
  • RDS(ON) @4,5V [mΩ]: 38 / 85
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 12,5 / -9,7
  • Manufacturer: Eris
S8MBG036

S8MBC012

  • Package: SOP-8
  • Configuration: Dual
  • MOSFET Type: N+P
  • VDS [V]: 30 / -30
  • RDS(ON) @10V [mΩ]: 12 / 25
  • RDS(ON) @4,5V [mΩ]: 18 / 42
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 12 / -9,8
  • Manufacturer: Eris
S8MBC012

TNMPC032A

  • Package: SOT-23
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -30
  • RDS(ON) @10V [mΩ]: 32
  • RDS(ON) @4,5V [mΩ]: 54
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -12
  • Manufacturer: Eris
TNMPC032A
Package

Configuration

MOSFET Type

VDS [V]

Rds (on) @10V [mΩ]

Rds (on) @4,5V [mΩ]

Vgs max. [V]

Vth max. [V]

Id @T=25°C [A]

Pd @T=25°C [W]

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