MOSFETs

A metal oxide semiconductor field effect transistor (short MOSFET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. The manufacturer ERIS offers a wide range of low-voltage MOSFETs.

There are 10 of 395 products shown.

TNMPM350

  • Package: SOT-23
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -100
  • RDS(ON) @10V [mΩ]: 350
  • RDS(ON) @4,5V [mΩ]: 400
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: -3
  • Manufacturer: Eris
TNMPM350

TLMPB160

  • Package: SOT-23S
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -20
  • RDS(ON) @4,5V [mΩ]: 160
  • VGS max, [V]: ±10
  • ID @T=25°C [A]: -2,5
  • Manufacturer: Eris
TLMPB160

TNMPB021

  • Package: SOT-23
  • Configuration: Single
  • MOSFET Type: P
  • VDS [V]: -20
  • RDS(ON) @4,5V [mΩ]: 21
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: -7
  • Manufacturer: Eris
TNMPB021

TPMNB250

  • Package: SOT-323
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 250
  • VGS max, [V]: ±12
  • ID @T=25°C [A]: 0,8
  • Manufacturer: Eris
TPMNB250

P3MNB012

  • Package: PPAK3X3
  • Configuration: Dual
  • MOSFET Type: N
  • VDS [V]: 20
  • RDS(ON) @4,5V [mΩ]: 12
  • VGS max, [V]: ±10
  • ID @T=25°C [A]: 30
  • Manufacturer: Eris
P3MNB012

D1MND6P6

  • Package: TO-252 (D-PAK)
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 40
  • RDS(ON) @10V [mΩ]: 6,6
  • RDS(ON) @4,5V [mΩ]: 8,8
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 75
  • Manufacturer: Eris
D1MND6P6

TRMNF16H

  • Package: SOT-723
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 55
  • RDS(ON) @10V [mΩ]: 1600
  • RDS(ON) @4,5V [mΩ]: 2500
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 0,3
  • Manufacturer: Eris
TRMNF16H

TPMNF16H

  • Package: SOT-323
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 55
  • RDS(ON) @10V [mΩ]: 1600
  • RDS(ON) @4,5V [mΩ]: 2500
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 0,32
  • Manufacturer: Eris
TPMNF16H

TNMND045

  • Package: SOT-23
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 40
  • RDS(ON) @10V [mΩ]: 45
  • RDS(ON) @4,5V [mΩ]: 60
  • VGS max, [V]: ±20
  • ID @T=25°C [A]: 5
  • Manufacturer: Eris
TNMND045

T2MNT033

  • Package: TO-220
  • Configuration: Single
  • MOSFET Type: N
  • VDS [V]: 250
  • RDS(ON) @10V [mΩ]: 33
  • RDS(ON) @4,5V [mΩ]: -
  • VGS max, [V]: ±30
  • ID @T=25°C [A]: 60
  • Manufacturer: Eris
T2MNT033
Package

Configuration

MOSFET Type

VDS [V]

Rds (on) @10V [mΩ]

Rds (on) @4,5V [mΩ]

Vgs max. [V]

Vth max. [V]

Id @T=25°C [A]

Pd @T=25°C [W]

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